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| FDD8444L N-Channel PowerTrench(R) MOSFET April 2007 FDD8444L (R) N-Channel PowerTrench MOSFET 40V, 50A, 6.0m Features Typ rDS(on) = 3.8m at VGS = 5V, ID = 50A Typ Qg(tot) = 46nC at VGS = 5V Low Miller Charge Low Qrr Body Diode UIS Capability (Single Pulse/ Repetitive Pulse) Qualified to AEC Q101 RoHS Compliant A REE I DF tm Applications Automotive Engine Control Powertrain Management Solenoid and Motor Drivers Electronic Transmission Distributed Power Architecture and VRMs Primary Switch for 12V and 24V systems M ENTATIO LE N MP (c)2006 Fairchild Semiconductor Corporation FDD8444L Rev A (W) LE 1 www.fairchildsemi.com FDD8444L N-Channel PowerTrench(R) MOSFET MOSFET Maximum Ratings TC = 25C unless otherwise noted Symbol VDSS Drain to Source Voltage VGS ID EAS PD Gate to Source Voltage Drain Current Continuous (TC < 150C, VGS = 10V) Pulsed Single Pulse Avalanche Energy Power Dissipation Derate above 25oC (Note 2) (Note 1) Continuous (Tamb = 25oC, VGS = 10V, with RJA = 52oC/W) Parameter Ratings 40 20 50 16 See Figure 4 295 153 1.02 -55 to +175 mJ W W/oC oC Units V V A TJ, TSTG Operating and Storage Temperature Thermal Characteristics RJC RJA Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient TO-252, 1in copper pad area 2 0.98 52 o o C/W C/W Package Marking and Ordering Information Device Marking FDD8444L Device FDD8444L Package TO-252AA Reel Size 13" Tape Width 12mm Quantity 2500 units Electrical Characteristics TJ = 25C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS IDSS IGSS Drain to Source Breakdown Voltage Zero Gate Voltage Drain Current Gate to Source Leakage Current ID = 250A, VGS = 0V VDS = 32V, VGS = 0V VGS = 20V TJ = 150oC 40 1 250 100 V A nA On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 250A ID = 50A, VGS= 10V ID = 50A, VGS= 5V rDS(on) Drain to Source On Resistance ID = 50A, VGS= 4.5V ID = 50A, VGS= 5V, TJ = 175oC 1 1.8 3.5 3.8 4.0 6.8 3 5.2 6.0 6.5 10.7 m V Dynamic Characteristics Ciss Coss Crss RG Qg(TOT) Qg(TH) Qgs Qgs2 Qgd Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge at 5V Threshold Gate Charge Gate to Source Gate Charge Gate Charge Threshold to Plateau Gate to Drain "Miller" Charge VDS = 25V, VGS = 0V, f = 1MHz f = 1MHz VGS = 0 to 5V VGS = 0 to 2V VDD = 20V ID = 50A Ig = 1.0mA 5530 605 400 1.7 46 5.4 16.3 10.9 21 60 7 pF pF pF nC nC nC nC nC FDD8444L Rev A (W) 2 www.fairchildsemi.com FDD8444L N-Channel PowerTrench(R) MOSFET Electrical Characteristics TJ = 25oC unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Switching Characteristics ton td(on) tr td(off) tf toff Turn-On Time Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Turn-Off Time VDD = 20V, ID = 50A VGS = 5V, RGS = 2 18.7 46 42 19.2 104 96 ns ns ns ns ns ns Drain-Source Diode Characteristics VSD trr Qrr Source to Drain Diode Voltage Reverse Recovery Time Reverse Recovery Charge ISD = 50A ISD = 25A IF = 50A, dIF/dt = 100A/s 0.9 0.8 34 29 1.25 1.0 44 38 V ns nC Notes: 1: Package current limitation is 50A. 2: Starting TJ = 25oC, L = 0.37mH, IAS = 40A. This product has been designed to meet the extreme test conditions and environment demanded by the automotive industry. For a copy of the requirements, see AEC Q101 at: http://www.aecouncil.com/ All Fairchild Semiconductor products are manufactured, assembled and tested under ISO9000 and QS9000 quality systems certification. FDD8444L Rev A (W) 3 www.fairchildsemi.com FDD8444L N-Channel PowerTrench(R) MOSFET Typical Characteristics POWER DISSIPATION MULIPLIER 1.2 ID, DRAIN CURRENT (A) 140 120 100 80 60 40 20 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 VGS = 5V VGS = 10V CURRENT LIMITED BY PACKAGE 1.0 0.8 0.6 0.4 0.2 0.0 0 25 50 75 100 125 150 TC, CASE TEMPERATURE(oC) 175 Figure 1. Normalized Power Dissipation vs Case Temperature 2 1 NORMALIZED THERMAL IMPEDANCE, ZJC DUTY CYCLE - DESCENDING ORDER D = 0.50 0.20 0.10 0.05 0.02 0.01 Figure 2. Maximum Continuous Drain Current vs Case Temperature 0.1 PDM t1 t2 NOTES: DUTY FACTOR: D = t1/t2 PEAK TJ = PDM x ZJC x RJC + TC 0.01 1E-3 -5 10 SINGLE PULSE 10 -4 Figure 3. Normalized Maximum Transient Thermal Impedance 4000 VGS = 10V TRANSCONDUCTANCE MAY LIMIT CURRENT IN THIS REGION 10 10 t, RECTANGULAR PULSE DURATION(s) -3 -2 10 -1 10 0 TC = 25oC FOR TEMPERATURES ABOVE 25oC DERATE PEAK CURRENT AS FOLLOWS: I = I25 175 - TC 150 IDM, PEAK CURRENT (A) 1000 100 10 -5 10 SINGLE PULSE 10 -4 10 10 t, RECTANGULAR PULSE DURATION(s) -3 -2 10 -1 10 0 Figure 4. Peak Current Capability FDD8444L Rev A (W) 4 www.fairchildsemi.com FDD8444L N-Channel PowerTrench(R) MOSFET Typical Characteristics 1000 ID, DRAIN CURRENT (A) 10us 500 IAS, AVALANCHE CURRENT (A) 100 100us 100 If R = 0 tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) If R 0 tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS - VDD) +1] 10 LIMITED BY PACKAGE STARTING TJ = 25 C o 10 STARTING TJ = 150 C o 1 OPERATION IN THIS AREA MAY BE LIMITED BY rDS(on) SINGLE PULSE TJ = MAX RATED o TC = 25 C 1ms 10ms DC 0.1 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 100 1 0.01 0.1 1 10 100 1000 tAV, TIME IN AVALANCHE (ms) Figure 5. Forward Bias Safe Operating Area NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 Figure 6. Unclamped Inductive Switching Capability 200 100 ID, DRAIN CURRENT (A) 80 60 40 20 0 0.5 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 10V VGS = 5V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX VGS = 3.5V ID, DRAIN CURRENT (A) VDD = 5V TJ = 175 C TJ = 25oC TJ = -55oC o 150 VGS = 4V 100 50 VGS = 3V 1.0 1.5 2.0 2.5 3.0 3.5 0 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Transfer Characteristics Figure 8. Saturation Characteristics ID = 50A rDS(on), DRAIN TO SOURCE ON-RESISTANCE (m) 25 20 15 10 5 0 PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 30 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -80 ID = 50A VGS = 10V PULSE DURATION = 80s DUTY CYCLE = 0.5% MAX TJ = 175oC TJ = 25oC 3 4 5 6 7 8 9 VGS, GATE TO SOURCE VOLTAGE (V) 10 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 Figure 9. Drain to Source On-Resistance Variation vs Gate to Source Voltage Figure 10. Normalized Drain to Source On Resistance vs Junction Temperature FDD8444L Rev A (W) 5 www.fairchildsemi.com FDD8444L N-Channel PowerTrench(R) MOSFET Typical Characteristics 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -80 ID = 250A 1.10 NORMALIZED DRAIN TO SOURCE BREAKDOWN VOLTAGE VGS = VDS ID = 250uA NORMALIZED GATE THRESHOLD VOLTAGE 1.05 1.00 0.95 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE(oC) 200 0.90 -80 -40 0 40 80 120 160 TJ, JUNCTION TEMPERATURE (oC) 200 Figure 11. Normalized Gate Threshold Voltage vs Junction Temperature 10000 Ciss Coss Figure 12. Normalized Drain to Source Breakdown Voltage vs Junction Temperature VGS, GATE TO SOURCE VOLTAGE(V) 10 8 6 4 2 0 ID = 50A CAPACITANCE (pF) VDD = 15V VDD = 20V VDD = 25V 1000 Crss 100 0.1 f = 1MHz VGS = 0V 1 10 VDS, DRAIN TO SOURCE VOLTAGE (V) 60 0 20 40 60 Qg, GATE CHARGE(nC) 80 100 Figure 13. Capacitance vs Drain to Source Voltage Figure 14. Gate Charge vs Gate to Source Voltage FDD8444L Rev A (W) 6 www.fairchildsemi.com FDD8444L N-Channel PowerTrench(R) MOSFET tm TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx(R) Across the board. Around the world.TM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM CTLTM Current Transfer LogicTM DOMETM E2CMOSTM EcoSPARK(R) EnSignaTM FACT Quiet SeriesTM FACT(R) FAST(R) FASTrTM FPSTM FRFET(R) GlobalOptoisolatorTM GTOTM HiSeCTM i-LoTM ImpliedDisconnectTM IntelliMAXTM ISOPLANARTM MICROCOUPLERTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANAR(R) PACMANTM POPTM Power220(R) Power247(R) PowerEdgeTM PowerSaverTM PowerTrench(R) Programmable Active DroopTM QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM ScalarPumpTM SMART STARTTM SPM(R) STEALTHTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TCMTM The Power Franchise(R) TM TinyBoostTM TinyBuckTM tm TinyLogic(R) TINYOPTOTM TinyPowerTM TinyWireTM TruTranslationTM SerDesTM UHC(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD'S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. PRODUCT STATUS DEFINITIONS Definition of Terms 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild Semiconductor.The datasheet is printed for reference information only. Rev. I24 Preliminary First Production No Identification Needed Full Production Obsolete Not In Production FDD8444L Rev A (W) 7 www.fairchildsemi.com |
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